Allwin21 Corp

PRODUCTS GOES HERE

Allwin21 Corp.는 2000년 California Morgan Hill에 설립
반도체, 바이오메티컬, 나노기술, 태양광, LED 산업 분야에서 RTP(Rapid Thermal Process), Plasma Asher Strip/Descum, Plasma Etch/RIE, Sputter Deposition, Metal Film Metrology 장비 공급
AG Associates의 Heatpulse 610 Rapid Thermal Process Tool 독점 라이선스 제조업체
AccuThermo AW 시리즈와 Atmospheric 및 Vacuum Rapid Thermal Processors를 제조/공급
진보된 온도 제어 기술을 바탕으로 최상의 고속 열처리 성능(반복성, 균일성, 안정성)을 달성

RTP

Sputter

Asher

Metrology

Wafer handling: Manual loading of wafer into the oven, single wafer processing.
Wafer sizes: 2″, 3″, 4″ ,5″ , 6″ wafers.
Ramp up rate: Programmable, 10°C to 200°C per second.
Recommended steady state duration and Temperature: 0-300 seconds per step. 200°C-1050°C. Typical Maximum 1250°C.
Ramp down rate: Programmable, 10°C to 250°C per second. Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second.
ERP temperature accuracy: ±1°C, when calibrated against an instrumented thermocouple wafer (ITC).
Thermocouple temperature accuracy: ±0.5°C
Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.

> AccuThermo AW820M RTP

Wafer handling: Manual loading of wafer into the oven, single wafer processing.
Wafer sizes: 2″, 3″, 4″ ,5″ , 6″ ,8″ wafers.
Ramp up rate: Programmable, 10°C to 200°C per second.
Recommended steady state duration: 0-300 seconds per step.
Ramp down rate: Programmable, 10°C to 250°C per second. Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second.
Recommended steady state temperature range: 150°C – 1150°C
ERP temperature accuracy: ±1°C, when calibrated against an instrumented thermocouple wafer (ITC).
Thermocouple temperature accuracy: ±0.5°C
Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
Temperature uniformity: ±7°C across a 8″ (200 mm) wafer at 1150°C.
Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, Nitrogen (N2), oxygen (O2), argon (Ar), and/or helium (He) are used.

Stand Alone and Manual loading of wafer into the oven
Single wafer processing.
Substrate: 2″, 3″, 4″,5″,6″,8″; Square or round; Transparent and Nontransparent
Ramp up rate: Programmable, 10°C to 150°C per second.
Recommended steady state duration: 0-600 seconds per step.
Ramp down rate: Non-Programmable, 10°C to 150°C per second..
Recommended steady state temperature range: 150°C – 1150°C
Vacuum Pressure (Optional): 50 mtorr to 13 Torr or 13 Torr to 760 Torr
Atmospheric function is optional
Patented Temperature Sensor temperature accuracy: ±1°C.
Thermocouple temperature accuracy: ±0.5°C
Temperature repeatability: ±0.5°C or better at 1150°C
Temperature uniformity: ±8°C across a 8″ (200mm) wafer at 1150°C
Process/Purge gas inputs: Any inert and/or non-toxic gas. Typically,N2,O2,Ar,NH3,N2O are used.

Wafer Size: 2″ – 8″ inch
Wafer loading: Manual, with Load Lock
Cathodes: 1~3 x Delta Shape OR 1~4 x 8″ Circle Shape
Sputter Methods: RF (RG VII: Air cooling 300W, 600W, 1000W, 2000W, 3000W)/ DC(Advanced Energy PNC3 6K , PNC3 10K)/ Pulsed DC (Advanced Energy PNC3 PLUS+ 5K, PNC3 PLUS+ 10K); Diode/Magnetron
Gas Lines: 1~3 MFCs
Table Rotate/Lift Subsystem: Feed-thru assembly (Option)

Wafer Size: 2″ – 6″ Capability
Wafer Loading: 3-axis Robot; Stationary Cassette Plate (Video)
Plasma Power: 600W Air-Cooled RF 13.56MHz
Type: Parallel/Single Wafer Process; Stand-Alone
Gas Lines: 1-3 Lines MFCs. Typical gases are 5 SLM O2, 500 SCCM O2,1000 SCCM N2.
Element heating for up to 250oC.
50mm-150mm wafer capability. Up to 6.25” substrate.
Up to 4 wafer size capability without hardware change.
Fixed cassette station and wafer aligner/cooling station.

Wafer Size: 2″ – 6″(Awgage-150) / 4″ – 8″(Awgage-200) Capability
Wafer Loading: Manual
Metal Thickness Range: 100Å – 270kÅ
Metal Sheet Resistance Range: 1mΩ/square – 19,990Ω/square capability
Non-contact Sheet Resistance Measurement technologies.
Touch Screen Monitor and PC w/ Advanced Allwin21 control software.
Wafer carriage travel programmed with internal encoder step motor , without encoder disk.
Consistent wafer-to-wafer process cycle repeatability.